NGB8206N

NGB8206N

$0.90
  • Description:IGBT 390V 20A 150W D2PAK
  • Series:-

SKU:a453f9d26001 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 390V 20A 150W D2PAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):390 V
  • Current - Collector (Ic) (Max):20 A
  • Current - Collector Pulsed (Icm):50 A
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 4.5V, 20A
  • Power - Max:150 W
  • Switching Energy:-
  • Input Type:Logic
  • Gate Charge:-
  • Td (on/off) @ 25°C:-/5µs
  • Test Condition:300V, 9A, 1kOhm, 5V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

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NGB8206N

Overview

The NGB8206N is a logic-level N-channel IGBT in a D2PAK package designed for high-voltage, high-current switching. It features monolithic ESD and overvoltage clamped protection. Key electrical parameters include a collector-emitter voltage of 390 V, continuous collector current of 20 A at 25°C case temperature, and pulsed current capability of 50 A. The saturation voltage is 1.3 V max at 10 A and 4.5 V gate drive. Thermal resistance from junction to case is 1.0 °C/W, with an operating temperature range of -55°C to +175°C.

Feature Summary

  • Integrates monolithic circuitry for ESD and overvoltage clamped protection.
  • Features temperature-compensated gate-collector voltage clamp to limit stress on the load.
  • Includes integrated ESD diode protection and low threshold voltage for logic interfacing.
  • Offers low saturation voltage and high pulsed current capability.

Applications

  • Ignition systems
  • Coil-on-Plug applications
  • Driver-on-Coil applications
  • Direct fuel injection

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging format. Options include rail shipping for NG variants or tape and reel configurations for NT4G and ANTF4G suffixes. Ensure the selected variant matches the required quantity and handling specifications for the assembly process.

Selection Notes

Select this component for applications requiring robust inductive coil driving capabilities. The device supports direct interfacing with microprocessor devices due to its low threshold voltage. Evaluate thermal management requirements based on the specified junction-to-case resistance and maximum power dissipation limits under expected operating conditions.

Part Context

This part belongs to the NGB8206 series of ignition IGBTs manufactured by onsemi. The series includes variants such as NGB8206AN and NGB8206NT4G, which share similar electrical characteristics but differ in packaging and shipping formats. These components are engineered specifically for automotive ignition and fuel injection environments.

Replacement Considerations

Check datasheets for alternative parts like NGB8207N or NGB8202N to verify compatibility regarding voltage ratings, current capacity, and pinout configuration before substitution.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCES) is rated at 390 V.

Does the device include internal protection circuits?

Yes, it integrates monolithic circuitry for ESD protection and a temperature-compensated gate-collector voltage clamp.

What is the typical gate-emitter resistor value?

The integrated gate-emitter resistor (RGE) has a typical value of 16 kΩ.

NGB8206NNGB8206N
$0.90
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