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The NGB8206N is a logic-level N-channel IGBT in a D2PAK package designed for high-voltage, high-current switching. It features monolithic ESD and overvoltage clamped protection. Key electrical parameters include a collector-emitter voltage of 390 V, continuous collector current of 20 A at 25°C case temperature, and pulsed current capability of 50 A. The saturation voltage is 1.3 V max at 10 A and 4.5 V gate drive. Thermal resistance from junction to case is 1.0 °C/W, with an operating temperature range of -55°C to +175°C.
Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging format. Options include rail shipping for NG variants or tape and reel configurations for NT4G and ANTF4G suffixes. Ensure the selected variant matches the required quantity and handling specifications for the assembly process.
Select this component for applications requiring robust inductive coil driving capabilities. The device supports direct interfacing with microprocessor devices due to its low threshold voltage. Evaluate thermal management requirements based on the specified junction-to-case resistance and maximum power dissipation limits under expected operating conditions.
This part belongs to the NGB8206 series of ignition IGBTs manufactured by onsemi. The series includes variants such as NGB8206AN and NGB8206NT4G, which share similar electrical characteristics but differ in packaging and shipping formats. These components are engineered specifically for automotive ignition and fuel injection environments.
Check datasheets for alternative parts like NGB8207N or NGB8202N to verify compatibility regarding voltage ratings, current capacity, and pinout configuration before substitution.
The maximum collector-emitter voltage (VCES) is rated at 390 V.
Yes, it integrates monolithic circuitry for ESD protection and a temperature-compensated gate-collector voltage clamp.
The integrated gate-emitter resistor (RGE) has a typical value of 16 kΩ.