NGB8207NT4G

$1.05

Description：IGBT 365V 20A 165W D2PAK
Series：-

SKU:195186049c5e Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 365V 20A 165W D2PAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：365 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：2.6V @ 4V, 20A
Power - Max：165 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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NGB8207NT4G

Overview

The NGB8207NT4G is a logic-level N-channel IGBT designed for inductive coil driver applications. It features monolithic circuitry integrating ESD and overvoltage clamped protection. Key electrical parameters include a collector-emitter voltage (VCES) of 365 V, continuous collector current (IC) of 20 A at 25°C case temperature, and pulsed collector current (Icm) of 50 A. The saturation voltage (VCE(on)) is typically 1.5 V at IC = 10 A and VGE = 4.5 V. The device operates within a junction temperature range of -55°C to +175°C and has a total power dissipation of 165 W at 25°C case temperature.

Feature Summary

Integrates gate-emitter ESD protection and an integrated ESD diode.
Features temperature-compensated gate-collector voltage clamp to limit stress on the load.
Designed with low threshold voltage for direct interfacing with logic or microprocessor devices.
Capable of handling high pulsed currents with minimum avalanche energy rating.

Applications

Ignition systems
Coil-on-Plug applications
Driver-on-Coil applications
Direct Fuel Injection systems

Procurement Notes

Verify the component authenticity by checking the marking diagram against the physical package. Confirm the ordering suffix 'T4G' corresponds to the D2PAK tape and reel packaging format specified in the datasheet. Ensure the Pb-free designation matches the environmental requirements of the assembly process.

Selection Notes

Select this component when designing circuits requiring high voltage switching up to 365 V with moderate current capabilities. Consider the thermal resistance characteristics and the need for adequate heatsinking given the 165 W power dissipation rating. Evaluate the gate drive requirements against the specified threshold voltage and input capacitance values for optimal switching performance.

Part Context

This part belongs to the NGB8207N family of Ignition IGBTs manufactured by onsemi. It is housed in a D2PAK (CASE 418B) surface-mount package. The device is specifically engineered for automotive and industrial environments where robust inductive load switching is required.

Replacement Considerations

Consult the manufacturer's documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage, current, and thermal specifications.