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The onsemi NGD15N41CLT4 is a logic level N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high voltage and current switching applications. It features monolithic circuitry integrating ESD and over-voltage clamped protection, making it suitable for inductive coil drivers. The device offers a collector-emitter voltage of 440 VDC and continuous collector current of 15 A at 25°C case temperature. Key electrical parameters include a saturation voltage of 2.1 V at 10 A and 4.5 V gate drive, and a maximum power dissipation of 107 W. It operates within a junction temperature range of -55°C to +175°C.
Verify the specific ordering suffix 'T4' corresponds to the DPAK package and tape & reel shipping configuration as defined in the official datasheet. Confirm that the part number includes the 'G' suffix if lead-free compliance is required for the assembly process. Ensure the procurement documentation matches the manufacturer's standard marking and packaging specifications.
Select this component when designing circuits requiring high voltage switching up to 440 VDC with moderate continuous current capabilities. The integrated protection features simplify driver design by handling transient events. Consider the thermal resistance characteristics and mounting requirements to ensure the junction temperature remains within the specified operating range during peak load conditions.
This IGBT belongs to the NGx15N41x family from onsemi, which includes variants such as NGD15N41CL, NGB15N41CL, and NGP15N41CL. These parts share identical electrical characteristics but differ in physical package types, including DPAK, D2PAK, and TO-220. The NGD variant specifically utilizes the DPAK surface mount package.
Public confirmed substitute part numbers are not available in the provided source material.