NGD15N41CLT4G

$1.91

Description：IGBT 440V 15A TO-252
Series：-

SKU:55e4cb070c9d Category: Single IGBTs Brand: Littelfuse Inc.

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Product introduction

Product Detailed Parameters

Description：IGBT 440V 15A TO-252
Series：-
Mfr：Littelfuse Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：440 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 4V, 10A
Power - Max：107 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：-/4µs
Test Condition：300V, 6.5A, 1kOhm
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252 (DPAK)
Grade：-
Qualification：-

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NGD15N41CLT4G

Overview

The NGD15N41CLT4G is a Logic Level Insulated Gate Bipolar Transistor (IGBT) manufactured by Littelfuse, formerly onsemi. It features monolithic circuitry integrating ESD and over-voltage clamped protection for use in inductive coil drivers applications. The device offers a collector-emitter voltage of 440 VDC and continuous collector current of 15 ADC. It is housed in a DPAK package.

Feature Summary

Ideal for Coil-on-Plug Applications
Gate-Emitter ESD Protection
Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection

Applications

Ignition systems
Direct Fuel Injection
Inductive coil drivers

Procurement Notes

Verify the manufacturer origin as Littelfuse acquired onsemi's semiconductor business. Confirm the specific ordering suffix T4G indicates tape and reel packaging with lead-free composition. Ensure the component matches the DPAK physical dimensions and pinout configuration required for the target PCB layout.

Selection Notes

Select this IGBT for high voltage and high current switching requirements where logic level interface is necessary. Consider the low saturation voltage and high pulsed current capability for efficient power handling. Evaluate thermal resistance parameters against the expected operating junction temperature range to ensure reliable performance under load conditions.

Part Context

This component belongs to the NGB/NGP/NGD series of Ignition IGBTs designed for automotive and industrial power switching. It integrates protection features typically requiring external components, simplifying circuit design. The device is part of a broader portfolio of power semiconductors aimed at improving energy efficiency and system reliability in demanding environments.