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Product Detailed Parameters
- Description：IGBT 440V 20A TO-252
- Series：-
- Mfr：Littelfuse Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：440 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 4.5V, 20A
- Power - Max：125 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：-/5µs
- Test Condition：300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Grade：-
- Qualification：-
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Overview
The NGD8201ANT4G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Littelfuse Inc. It features a collector-emitter breakdown voltage of 400 V and a continuous collector current rating of 20 A at 25°C. The device is housed in a DPAK surface-mount package, providing a maximum power dissipation capacity of 125 W. Designed for logic-level input control, it operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Non-Punch Through (NPT) technology ensures positive temperature coefficients for safe parallel operation.
- Square Reverse Bias Safe Operating Area (RBSOA) enables hard switching without snubber diodes.
- Logic-compatible gate drive simplifies interface circuitry requirements.
Applications
- Automotive ignition systems
- AC and DC motor drives
- High-frequency power supplies
Procurement Notes
Verify the manufacturer designation on the component marking, as Littelfuse acquired ON Semiconductor's power division. Confirm the specific suffix 'T4G' indicates tape-and-reel packaging if required for automated assembly. Ensure RoHS compliance documentation matches the production batch date code.
Selection Notes
Select this component when a 400 V blocking capability with 20 A continuous current is required in a compact DPAK footprint. The NPT structure is preferred over Punch-Through designs for applications demanding robust short-circuit withstand capability and simplified thermal management due to positive temperature coefficients.
Part Context
This part belongs to the NGD8201 series of automotive-grade IGBTs. It shares the same die and electrical characteristics as the onsemi NGD8201NT4G, reflecting the integration of ON Semiconductor's power products into the Littelfuse portfolio following the acquisition.
Replacement Considerations
The onsemi NGD8201NT4G is a direct equivalent with identical specifications. Other compatible alternatives include the NGD8201BNT4G and NGD8201ANT4G variants within the same family.
