NGD8201BNT4G

$0.48

Description：IGBT 430V 15A TO-252
Series：-

SKU:12551c5da1bc Category: Single IGBTs Brand: Littelfuse Inc.

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Product introduction

Product Detailed Parameters

Description：IGBT 430V 15A TO-252
Series：-
Mfr：Littelfuse Inc.
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：430 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 4.5V, 10A
Power - Max：115 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：-/4µs
Test Condition：300V, 6.5A, 1kOhm
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252 (DPAK)
Grade：-
Qualification：-

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NGD8201BNT4G

Overview

The NGD8201BNT4G is a Non-Punch Through (NPT) Insulated Gate Bipolar Transistor manufactured by Littelfuse. It features a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 20A at 25°C. The device is housed in a DPAK-3 surface-mount package, providing a maximum power dissipation of 125W. It exhibits a saturation voltage of approximately 1.9V at 20A and includes an integrated anti-parallel diode. The component operates within a junction temperature range of -55°C to 175°C.

Feature Summary

Non-Punch Through (NPT) technology provides square reverse bias safe operating area for improved inductive load clamping
Positive temperature coefficients facilitate parallel operation without current balancing components
Integrated anti-parallel diode simplifies circuit design for hard switching applications

Applications

AC and DC motor drives
High-frequency power supplies
Pulse generators for lasers and X-ray machines

Procurement Notes

Verify the manufacturer designation carefully, as the NGD8201 series was originally developed by onsemi before being acquired by Littelfuse. Confirm that the specific BNT4G suffix matches the required NPT variant specifications. Ensure the documentation aligns with Littelfuse's current product portfolio standards rather than legacy onsemi datasheets to avoid discrepancies in electrical parameters or pin configurations.

Selection Notes

Select this component for designs requiring robust short-circuit withstand capability and reliable performance under hard switching conditions. The NPT structure offers superior thermal stability compared to punch-through variants. Consider the DPAK package constraints for thermal management and ensure the gate drive voltage supports the specified saturation characteristics for optimal efficiency in power conversion systems.

Part Context

This IGBT belongs to the NPT family of solid-state switches designed for high-voltage circuits. These devices are engineered to replace multiple lower-voltage switches, rectifiers, and discharge relays. The series is characterized by high power density and epoxy moldings with UL 94 V-0 flammability ratings, suitable for demanding industrial and commercial power electronics environments.