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The NGD8201NT4G is a logic-level N-channel IGBT from onsemi, packaged in DPAK (TO-252). It features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers. Key electrical parameters include a collector-emitter voltage of 440 V, continuous collector current of 20 A at 25°C, and pulsed collector current of 50 A. The saturation voltage is typically 1.3 V at 10 A with a gate-emitter voltage of 4.5 V. Operating temperature ranges from -55°C to +175°C.
Verify the specific ordering suffix against official documentation, as variations exist within the product family. Confirm component availability status, as this part may be discontinued or subject to lifecycle changes. Ensure compliance with RoHS directives if required by the application specifications. Cross-reference datasheet revision numbers to guarantee accurate parameter validation during procurement.
Select based on the required voltage rating of 440 V and current handling capabilities up to 20 A continuous. Consider the thermal resistance characteristics for heat dissipation requirements in the target environment. Evaluate the low saturation voltage for efficiency optimization in high-frequency switching scenarios. Verify compatibility with logic-level drive voltages due to the specified low threshold voltage characteristics.
This component belongs to the NGD8201 series of ignition IGBTs manufactured by onsemi. The series includes variants such as the NGD8201AN, which shares similar electrical characteristics but may differ in specific test conditions or packaging options. These devices are engineered specifically for automotive-grade reliability in high-voltage switching environments.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer documentation for potential cross-references or updated replacements within the same product family.
The maximum collector-emitter voltage (VCES) is rated at 440 V.
Yes, it integrates gate-emitter ESD protection and a temperature-compensated gate-collector voltage clamp.
The typical saturation voltage (VCE(on)) is 1.3 V when tested at IC = 10 A and VGE = 4.5 V.