NGD8201NT4

NGD8201NT4

$0.75
  • Description:IGBT 440V 20A DPAK
  • Series:-

SKU:bd599414ae38 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IGBT 440V 20A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):440 V
  • Current - Collector (Ic) (Max):20 A
  • Current - Collector Pulsed (Icm):50 A
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 4.5V, 20A
  • Power - Max:125 W
  • Switching Energy:-
  • Input Type:Logic
  • Gate Charge:-
  • Td (on/off) @ 25°C:-/5µs
  • Test Condition:300V, 9A, 1kOhm, 5V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:-
  • Qualification:-

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NGD8201NT4

Overview

The NGD8201NT4G is a logic-level N-channel IGBT from onsemi, packaged in DPAK (TO-252). It features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers. Key electrical parameters include a collector-emitter voltage of 440 V, continuous collector current of 20 A at 25°C, and pulsed collector current of 50 A. The saturation voltage is typically 1.3 V at 10 A with a gate-emitter voltage of 4.5 V. Operating temperature ranges from -55°C to +175°C.

Feature Summary

  • Integrates gate-emitter ESD protection and an integrated ESD diode.
  • Features a temperature-compensated gate-collector voltage clamp to limit stress applied to the load.
  • Low threshold voltage designed for interfacing power loads to logic or microprocessor devices.
  • High pulsed current capability suitable for demanding switching applications.

Applications

  • Ignition systems
  • Direct fuel injection
  • Coil-on-plug applications
  • Driver-on-coil applications

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations exist within the product family. Confirm component availability status, as this part may be discontinued or subject to lifecycle changes. Ensure compliance with RoHS directives if required by the application specifications. Cross-reference datasheet revision numbers to guarantee accurate parameter validation during procurement.

Selection Notes

Select based on the required voltage rating of 440 V and current handling capabilities up to 20 A continuous. Consider the thermal resistance characteristics for heat dissipation requirements in the target environment. Evaluate the low saturation voltage for efficiency optimization in high-frequency switching scenarios. Verify compatibility with logic-level drive voltages due to the specified low threshold voltage characteristics.

Part Context

This component belongs to the NGD8201 series of ignition IGBTs manufactured by onsemi. The series includes variants such as the NGD8201AN, which shares similar electrical characteristics but may differ in specific test conditions or packaging options. These devices are engineered specifically for automotive-grade reliability in high-voltage switching environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer documentation for potential cross-references or updated replacements within the same product family.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCES) is rated at 440 V.

Does the device include internal protection circuits?

Yes, it integrates gate-emitter ESD protection and a temperature-compensated gate-collector voltage clamp.

What is the typical saturation voltage at full load?

The typical saturation voltage (VCE(on)) is 1.3 V when tested at IC = 10 A and VGE = 4.5 V.

NGD8201NT4NGD8201NT4
$0.75
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