NGTB05N60R2DT4G

$0.39

Description：IGBT 5A 600V DPAK
Series：*

SKU:48adaacf873a Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 5A 600V DPAK
Series：*
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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NGTB05N60R2DT4G

Overview

The NGTB05N60R2DT4G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a maximum continuous collector current of 16 A. The device exhibits a collector-emitter saturation voltage of 2 V at a gate-emitter voltage of 15 V and a collector current of 5 A. The maximum gate-emitter threshold voltage is specified as 7 V, with a maximum gate-emitter voltage rating of 20 V. It operates at a maximum junction temperature of 175 °C and utilizes a surface-mount DPAK (TO-252) package.

Feature Summary

Integrated fast recovery diode for inductive load switching applications
High thermal stability supporting operation up to 175 °C junction temperature
Low saturation voltage design for improved conduction efficiency

Applications

Motor control drives
Switched-mode power supplies
Inductive load switching circuits

Procurement Notes

Verify the component authenticity through official onsemi channels or authorized distributors. Confirm the specific ordering suffix matches the required package and tape-and-reel specifications. Check for RoHS compliance status and lead-free markings on the physical device. Ensure storage conditions adhere to moisture sensitivity level 1 requirements prior to assembly.

Selection Notes

Select this component when a 600 V blocking capability and moderate current handling are required in a surface-mount form factor. Compare the 2 V saturation voltage against alternative devices to ensure compatibility with thermal management constraints. Verify that the 16 A current rating aligns with the peak load demands of the target circuit design.

Part Context

This part belongs to the onsemi IGBT family designed for general-purpose switching applications. It complements other variants in the series offering different current ratings and package options. The device integrates a monolithic diode, simplifying circuit topology compared to discrete IGBT-diode combinations.

Replacement Considerations

Direct substitutes include NGTB03N60R2DT4G for lower current requirements. Cross-reference datasheets for pinout compatibility and electrical parameter margins before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.