NGTB15N120LWG

Overview

The onsemi NGTB15N120LWG is a Field Stop (FS) Trench IGBT in a TO-247 package. It features a co-packaged free-wheeling diode with low forward voltage. Key electrical parameters include a collector-emitter voltage of 1200 V, continuous collector current of 30 A at 25°C, and saturation voltage of 1.8 V at 15 A. Switching losses are rated at Eon = 2.1 mJ and Eoff = 0.56 mJ at 600 V, 15 A. The device supports 5 µs short-circuit withstand time and operates within a junction temperature range of -55 to +150 °C.

Feature Summary

• Field Stop Trench construction for low on-state voltage and minimal switching loss
• Integrated rugged co-packaged free-wheeling diode with low forward voltage
• Short-circuit capability up to 5 microseconds

Applications

• Inverter welding machines
• Microwave ovens
• Industrial switching
• Motor control inverters

Procurement Notes

Verify the ordering suffix WG indicates a lead-free package configuration. Confirm the specific revision level against the manufacturer's latest documentation to ensure compatibility with design requirements. Validate thermal resistance values during system integration planning.

Selection Notes

Select this component for resonant or soft-switching applications requiring low gate charge. Evaluate the 1200 V rating against peak circuit voltages. Consider the 30 A continuous current limit relative to thermal management capabilities and ambient operating conditions.

Part Context

This part belongs to the NGTB series of insulated gate bipolar transistors manufactured by onsemi. It utilizes trench gate technology combined with field stop structures to optimize performance metrics such as conduction and switching losses compared to older planar designs.

Replacement Considerations

Check datasheets for alternative models like NGTB20N120LWG or NGTB25N120LWG if higher current ratings are required. Verify pinout compatibility and thermal characteristics before substituting.