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The onsemi NGTB15N135IHRWG is a Field Stop IGBT featuring an integrated monolithic free-wheeling diode. It operates with a collector-emitter voltage of 1350 V and a continuous collector current of 15 A at 25°C. The device utilizes a TO-247 package for through-hole mounting, supporting a maximum power dissipation of 260 W. It offers a switching frequency capability of 1 MHz and maintains a low saturation voltage of 2.2 V. The component functions within a temperature range of -55°C to +175°C junction temperature.
Verify the specific suffix against official datasheets to confirm electrical tolerances and packaging variations. Ensure compatibility with existing thermal management designs due to the 260 W dissipation rating. Confirm RoHS compliance status for regulatory adherence in target markets before finalizing procurement orders.
Select this component when a 1350 V blocking voltage is required alongside moderate current handling capabilities. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Evaluate thermal resistance requirements carefully to ensure the TO-247 package can dissipate heat effectively under continuous load conditions.
This part belongs to the NGTB series of insulated gate bipolar transistors from onsemi. The series focuses on high-voltage applications requiring robust switching performance. The 'FL' or 'IHR' suffixes typically denote specific field-stop technologies and diode integration levels within the product family.
Direct replacements include NGTB15N120FL2WG for lower voltage applications or NGTB20N135IHRWG for higher current capacity. Verify pinout compatibility and thermal characteristics before substituting.