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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 40A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.65V @ 15V, 20A
- Power - Max：341 W
- Switching Energy：480µJ (off)
- Input Type：Standard
- Gate Charge：150 nC
- Td (on/off) @ 25°C：-/170ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB20N120IHWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Field-Stop technology. It features a maximum continuous collector current of 40 A and a collector-emitter voltage rating of 1200 V. The device operates within a junction temperature range of -40 °C to +175 °C, with a maximum power dissipation of 341 W. Packaged in a TO-247 through-hole housing, it supports switching speeds up to 1 MHz. Key electrical parameters include a maximum gate-emitter voltage of ±20 V and a typical rated energy of 0.92 mJ.
Feature Summary
- Field-Stop trench technology for optimized switching performance
- High thermal stability supporting operation up to 175 °C
- Robust short-circuit capability for industrial protection
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix 'WG' against official datasheets to confirm RoHS compliance and lead-free status. Ensure the ordering part number matches the exact electrical ratings required for the target circuit design. Cross-reference manufacturer documentation for any recent package or material updates.
Selection Notes
Select this component when a 1200 V blocking voltage and 40 A continuous current are required in a standard TO-247 footprint. Consider the 341 W power dissipation limit and thermal resistance characteristics for heatsink sizing. Verify that the ±20 V gate drive requirements align with the control system capabilities.
Part Context
This IGBT belongs to onsemi's high-voltage discrete semiconductor portfolio, designed for robust power switching applications. It represents a standard solution for medium-power industrial electronics where reliability and thermal performance are critical constraints.
Replacement Considerations
Direct substitutes may include other 1200 V, 40 A IGBTs in TO-247 packages from manufacturers such as Infineon or Mitsubishi. Verify pinout compatibility and thermal interface dimensions before substitution.
