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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 40A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：192 W
- Switching Energy：3.1mJ (on), 700µJ (off)
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：86ns/235ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB20N120LWG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor (IGBT) with an integrated free-wheeling diode. It operates at a collector-emitter voltage of 1200 V and supports a continuous collector current of 40 A at 25°C case temperature. The device features a low saturation voltage of 1.80 V at 20 A and a turn-off switching loss of 0.7 mJ under standard test conditions. It provides 5 µs short-circuit withstand capability and functions within a junction temperature range of -55°C to +150°C. Packaged in a TO-247 housing, it is designed for high-efficiency power switching applications.
Feature Summary
- Field Stop Trench construction delivers low on-state voltage and minimal switching loss.
- Integrated rugged co-packaged free-wheeling diode with low forward voltage characteristics.
- Capable of 5 µs short-circuit withstand time for enhanced system protection.
Applications
- Inverter welding machines
- Microwave ovens
- Industrial switching systems
- Motor control inverters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Ensure that the requested variant matches the required thermal and electrical specifications for the target application before finalizing procurement orders.
Selection Notes
Select this component for resonant or soft-switching applications requiring robust performance. Evaluate the thermal resistance values and safe operating area curves to ensure adequate heat dissipation. Confirm gate drive requirements align with the specified threshold and charge parameters for optimal switching efficiency.
Part Context
This IGBT belongs to the NGTB series from onsemi, utilizing advanced trench technology. It is housed in a TO-247 package suitable for through-hole mounting. The device integrates a fast recovery diode, simplifying circuit design for high-voltage power conversion tasks.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical ratings when considering cross-references to ensure functional equivalence in existing designs.
FAQ
What is the maximum short-circuit withstand time?
The device supports a short-circuit withstand time of 5 µs at VGE = 15 V, VCE = 600 V, and TJ ≤ 150°C.
What is the typical turn-off switching loss?
The typical turn-off switching loss (Eoff) is 0.7 mJ at VCC = 600 V, IC = 20 A, and RG = 10 Ω.
Does the device include an integrated diode?
Yes, the IGBT incorporates a rugged co-packaged free-wheeling diode with a low forward voltage.
