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The NGTB20N60L2TF1G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes silicon technology and is housed in a TO-3PF-3L through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.45 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 64 W. It operates within a temperature range from -55°C to +175°C.
Verify component authenticity against official datasheets due to potential availability constraints. Confirm RoHS compliance status prior to integration. Ensure the specific suffix matches required specifications as ordering details may vary. Cross-reference part numbers with authorized distributors to avoid obsolete stock issues.
Select this component for high-voltage switching tasks requiring robust thermal performance. Compare the 600V rating and 40A current capacity against circuit demands. Evaluate the TO-3PF-3L package for mechanical fit and thermal management requirements relative to alternative packages like TO-220 or TO-247.
This part belongs to the NGTG/NGTB series of N-channel IGBTs from onsemi. These devices are designed for general-purpose switching applications. The series typically offers optimized trade-offs between conduction losses and switching speeds. The TO-3PF package provides a balance between power handling and board space efficiency.
Direct substitutes include the NGTG20N60L2TF1G, which shares identical electrical characteristics and pinout. Verify that any replacement maintains the same TO-3PF-3L package and 600V/40A ratings to ensure compatibility.