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Product Detailed Parameters
- Description：IGBT FIELD STOP 1200V 50A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 25A
- Power - Max：385 W
- Switching Energy：1.95mJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：178 nC
- Td (on/off) @ 25°C：87ns/179ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：154 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB25N120FL2WG is a Field Stop N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching. It features a maximum continuous collector current of 25 A and a collector-emitter voltage rating of 1200 V. The device operates within a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 385 W. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter voltage limit of ±30 V, and a reverse recovery time of 154 ns. Packaged in a TO-247-3 through-hole housing, it supports switching speeds up to 1 MHz.
Feature Summary
- Field Stop technology implementation for optimized switching performance
- High thermal stability with extended operating temperature range
- Low saturation voltage for reduced conduction losses
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the complete part number including suffixes against official manufacturer documentation to ensure correct specifications. Confirm RoHS compliance status and package variant prior to ordering. Cross-reference datasheet revisions to validate parameter consistency. Ensure supply chain sources provide authentic components matching the specified technical requirements.
Selection Notes
Select this component for applications requiring robust 1200 V blocking capability with moderate current handling. Evaluate thermal management solutions suitable for the TO-247 package and 385 W dissipation rating. Compare saturation voltage and switching speed against system efficiency targets. Verify gate drive compatibility with the specified voltage limits.
Part Context
This IGBT belongs to onsemi's Field Stop series, engineered for improved trade-offs between conduction and switching losses compared to standard NPT technologies. The TO-247 package provides reliable through-hole mounting for industrial environments. It serves as a discrete power switch alternative to integrated modules in medium-power designs.
Replacement Considerations
Direct substitutes may include other 1200 V, 25 A Field Stop IGBTs in TO-247 packages from compatible manufacturers. Verify pinout compatibility and thermal resistance values before substitution.
