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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 50A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 25A
- Power - Max：192 W
- Switching Energy：1.5mJ (on), 950µJ (off)
- Input Type：Standard
- Gate Charge：220 nC
- Td (on/off) @ 25°C：91ns/228ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：240 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi NGTB25N120FLWG is a Field Stop N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum continuous collector current of 50 A and a collector-emitter voltage rating of 1200 V. The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 192 W. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a collector-emitter saturation voltage of 6.5 V, and a package type of TO-247 with three pins for through-hole mounting.
Feature Summary
- Field Stop technology for optimized switching performance
- High thermal stability up to 150°C junction temperature
- Robust 1200V blocking capability
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix 'FLWG' against the manufacturer's official datasheet to confirm pinout and electrical characteristics match the design requirements. Ensure compliance with RoHS standards as indicated in component records. Cross-reference the part number with authorized distributors to avoid counterfeit components. Confirm that the TO-247 package dimensions fit the intended PCB layout and thermal management strategy.
Selection Notes
Select this component for applications requiring high voltage isolation and moderate current handling. The 1200V rating suits systems operating above 600V DC. Consider the 192W power dissipation limit when designing heat sinks. The 50A continuous current rating provides headroom for transient loads. Verify gate drive compatibility with the specified voltage limits.
Part Context
This IGBT belongs to onsemi's Field Stop series, which utilizes advanced trench gate technology to reduce switching losses compared to standard NPT designs. The TO-247 package offers reliable thermal performance for industrial environments. It serves as a core switching element in power conversion stages where efficiency and reliability are critical.
Replacement Considerations
Direct substitutes may include other 1200V 50A Field Stop IGBTs in TO-247 packages from onsemi or competitors like Infineon. Verify pin compatibility and thermal resistance values before substitution. Check if alternative parts meet the same switching speed and saturation voltage specifications.
