NGTB25N120LWG

Description：IGBT TRENCH FS 1200V 50A TO-247
Series：-

SKU:fd80521cabe4 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 50A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 25A
Power - Max：192 W
Switching Energy：3.4mJ (on), 800µJ (off)
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：89ns/235ns
Test Condition：600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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NGTB25N120LWG

Overview

The onsemi NGTB25N120LWG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247 package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C, derating to 25 A at 100°C. The device exhibits a typical collector-emitter saturation voltage of 1.85 V at 25°C and 2.1 V at 150°C. Integrated with the IGBT is a rugged co-packaged free-wheeling diode with a forward voltage of 1.7 V. Key electrical parameters include a total gate charge of 200 nC and a short-circuit withstand time of 5 µs.

Feature Summary

Field Stop Trench construction for low saturation voltage and minimal switching loss
Co-packaged free-wheeling diode with low forward voltage
5 µs short-circuit capability under specified conditions

Applications

Inverter welding machines
Motor control inverters
Industrial switching applications
Resonant or soft switching applications

Procurement Notes

Verify the component against the official datasheet specifications before integration. Confirm that the TO-247 package dimensions and pinout align with the design requirements. Ensure thermal management solutions accommodate the junction-to-case thermal resistance values provided in the documentation. Validate operating conditions against absolute maximum ratings to maintain reliability.

Selection Notes

Select this component for high-voltage switching applications requiring robust performance. Consider the 1200 V rating and 50 A current capacity for suitable load matching. Evaluate the thermal characteristics, specifically the junction-to-case resistance, for heat sink design. Verify compatibility with gate drive voltages and short-circuit protection circuits based on the 5 µs withstand limit.

Part Context

This part belongs to the NGTB series of IGBTs from onsemi, designed for demanding switching environments. It utilizes Field Stop Trench technology to optimize conduction and switching losses. The TO-247 package provides a reliable solution for through-hole mounting in industrial and power electronics systems.