NGTB30N120IHRWG

Description：IGBT TRENCH FS 1200V 60A TO-247
Series：-

SKU:f9e19ab23a5a Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 60A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
Power - Max：384 W
Switching Energy：700µJ (off)
Input Type：Standard
Gate Charge：225 nC
Td (on/off) @ 25°C：-/230ns
Test Condition：600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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NGTB30N120IHRWG

Overview

The NGTB30N120IHRWG is a Field Stop (FS) Trench Insulated Gate Bipolar Transistor with an integrated monolithic free-wheeling diode, manufactured by onsemi. It operates in the TO-247 package and supports a maximum collector-emitter voltage of 1200 V. The device handles a continuous collector current of 60 A at 25°C case temperature and 30 A at 100°C. Key electrical parameters include a saturation voltage of 2.20 V at 30 A and 15 V gate drive, and a turn-off switching loss of 0.70 mJ under standard test conditions. The junction temperature range spans from -40°C to +175°C.

Feature Summary

Utilizes robust Field Stop Trench construction for superior performance in demanding switching applications.
Integrates a monolithic free-wheeling diode within a single die solution for cost-effective design.
Optimized for low conduction losses and minimal switching energy dissipation.
Designed specifically for efficient operation in resonant or soft switching topologies.

Applications

Inductive heating systems
IH cookers and consumer appliances
Soft switching power converters

Procurement Notes

Verify the complete part number including the WG suffix to confirm lead-free status. Confirm the specific revision level against the latest datasheet to ensure compatibility with thermal and electrical requirements. Validate that the TO-247 mounting dimensions match the target heatsink interface before finalizing procurement orders.

Selection Notes

Select this component when high voltage blocking capability and low switching loss are critical for system efficiency. Ensure the application's thermal management can maintain the junction temperature within the specified operating range during peak load conditions. Consider the integrated diode characteristics if freewheeling paths are required without additional discrete components.

Part Context

This device belongs to onsemi's family of high-performance IGBTs designed for industrial and consumer power conversion. It represents a cost-effective alternative to discrete IGBT and diode combinations, simplifying circuit layout while maintaining high reliability standards for repetitive switching operations.