NGTB30N135IHRWG

$2.48

Description：IGBT TRENCH FS 1350V 60A TO-247
Series：-

SKU:5aab96ecb9c2 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1350V 60A TO-247
Series：-
Mfr：onsemi
Package：Bulk,Tube,Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1350 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.65V @ 15V, 30A
Power - Max：394 W
Switching Energy：850µJ (off)
Input Type：Standard
Gate Charge：234 nC
Td (on/off) @ 25°C：-/250ns
Test Condition：600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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NGTB30N135IHRWG

Overview

The NGTB30N135IHRWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a trench technology design with an integrated monolithic free-wheeling diode. The device supports a maximum collector-emitter voltage of 1350 V and a continuous collector current of 60 A at 25°C. Key electrical parameters include a saturation voltage of 1.95 V at 30 A, a gate charge of 163 nC, and a turn-off energy of 1.05 mJ under standard test conditions. The component is housed in a TO-247-3 package for through-hole mounting.

Feature Summary

Trench field-stop technology for low conduction losses
Integrated monolithic free-wheeling diode
High short-circuit capability
RoHS compliant construction

Applications

Motor drive inverters
Switched-mode power supplies
Induction heating systems
Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix to ensure the correct tape-and-reel or tube packaging configuration matches the assembly requirements. Confirm that the RoHS status aligns with environmental compliance standards for the target market. Check for any recent lifecycle notifications regarding obsolescence or last-time buy dates directly from the manufacturer's official channels before finalizing procurement plans.

Selection Notes

Select this component when high voltage blocking capability above 1200 V is required alongside moderate current handling up to 60 A. The integrated diode simplifies circuit topology by eliminating external flyback components. Ensure the thermal management solution can dissipate the specified power loss within the junction temperature limits defined in the datasheet.

Part Context

This part belongs to onsemi's IGBT family utilizing trench technology. It is designed for medium-power applications requiring efficient switching and robust performance. The TO-247-3 package provides a balance between electrical isolation and thermal dissipation suitable for industrial and consumer electronics.