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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 60A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：250 W
- Switching Energy：700µJ (on), 280µJ (off)
- Input Type：Standard
- Gate Charge：170 nC
- Td (on/off) @ 25°C：83ns/170ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：72 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The NGTB30N60FLWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 30 A at 25 °C. The device utilizes the PowerMESH™ technology to optimize the trade-off between switching performance and low on-state behavior. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.95 V at 30 A, a gate charge of 78 nC, and a total power dissipation capability of 240 W. It operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Utilizes advanced PowerMESH™ process for optimized switching and conduction characteristics
- Designed for high-frequency operation up to 50 kHz
- Features a low CRES/CIES ratio to minimize susceptibility to cross-conduction
Applications
- Motor control drives
- Switched-mode power supplies
- High-frequency inverter circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements if mandated by the design. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this IGBT for applications requiring a balance of low conduction losses and fast switching speeds. Ensure the thermal management solution supports the 240 W power dissipation rating. Verify that the drive circuit can handle the specified gate charge and voltage limits to prevent device stress during high-frequency transitions.
Part Context
This component belongs to onsemi's discrete IGBT portfolio, specifically leveraging the PowerMESH™ technology line. It is designed as a replacement or upgrade for older IGBT generations in medium-power industrial applications. The TO-247 package provides robust mechanical stability for through-hole mounting in high-current scenarios.
Replacement Considerations
Compatible alternatives include the NGTB30N60FWG and NGTB30N60IHLWG from the same manufacturer. These variants share similar electrical ratings but may differ in packaging details or specific switching energy characteristics. Verify pinout compatibility and thermal resistance values when substituting.
