NGTB30N60FWG

Overview

The NGTB30N60FWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, housed in a TO-247 package. It features Trench construction for low saturation voltage and minimal switching loss. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 30 A at 100°C. Key electrical parameters include a maximum VCEsat of 1.75 V at 150°C, total switching loss of 1.90 mJ at 150°C, and short-circuit withstand time of 5 µs. Thermal resistance from junction to case is 0.75 °C/W.

Feature Summary

• Optimized Trench construction provides superior performance with low on-state voltage and minimal switching loss.
• Integrated soft fast reverse recovery diode enhances system efficiency.
• Capable of withstanding short-circuit conditions for up to 5 microseconds.

Applications

• Power Factor Correction
• High-frequency switching power supplies
• Industrial motor drives

Procurement Notes

Verify the component against official datasheets to confirm specifications such as VCEsat, switching times, and thermal characteristics. Ensure the ordering suffix matches the required Pb-Free status and packaging format. Cross-reference part numbers with authorized distributors to validate authenticity and technical compliance before procurement.

Selection Notes

Select this IGBT for applications requiring robust switching performance and low conduction losses. Consider the 600 V rating and 30 A continuous current capability when designing circuits. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and operating temperature range.

Part Context

This component belongs to the NGTB series of IGBTs from onsemi, designed for cost-effective and high-performance switching applications. The series utilizes Trench technology to achieve low saturation voltages and reduced switching losses, making it suitable for demanding power electronics environments.

Replacement Considerations

Compatible substitutes include NGTB30N60FLWG and NGTG30N60FWG. Verify pinout compatibility and electrical parameters such as VCEsat and switching times before substitution.

FAQ

What is the short-circuit withstand time for the NGTB30N60FWG?

The device can withstand short-circuit conditions for 5 microseconds under specified test conditions.

What is the maximum collector-emitter saturation voltage at 150°C?

The maximum VCEsat is 1.75 V when tested at 150°C with a gate-emitter voltage of 15 V and collector current of 30 A.

Does the NGTB30N60FWG include an integrated diode?

Yes, it features a soft fast reverse recovery diode optimized for efficient switching.