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The NGTB40N120FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Field Stop II Trench technology to achieve low saturation voltage and minimal switching loss. The device integrates a soft, fast-recovery anti-parallel free-wheeling diode. Key electrical parameters include a maximum collector-emitter voltage of 1200 V, a continuous collector current of 40 A at 25°C, and a peak collector current of 80 A. Maximum power dissipation is rated at 535 W. The component supports operation up to a junction temperature of 175°C and offers 10 µs short-circuit capability.
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm RoHS designation and lead-free terminal finish requirements match project specifications. Ensure thermal management design accommodates the specified power dissipation limits.
Select this component for high-efficiency inverter designs requiring robust short-circuit tolerance. Evaluate thermal resistance values relative to the heatsink interface. Compare switching energy losses against alternative trench technologies for optimal system efficiency.
This part belongs to the NGTB series of Field Stop II IGBTs from onsemi. It shares architectural similarities with other devices in the family, such as the NGTB25N120FLWG, but differs in current handling capabilities and specific thermal characteristics defined by its 40A rating.
Direct substitutes within the same product line include the NGTB25N120FLWG or NGTB50N120FL2WG, provided current ratings align with circuit demands. Verify pinout compatibility and thermal interface dimensions before substitution.