NGTB40N120FL3WG

Overview

The NGTB40N120FL3WG is an N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, housed in a TO-247 package. It utilizes Ultra Field Stop Trench technology to achieve low saturation voltage and minimal switching loss. The device integrates a soft and fast co-packaged free-wheeling diode. Key electrical ratings include a collector-emitter voltage of 1200 V, a continuous collector current of 40 A at 100°C, and a maximum junction temperature of 175°C. At 25°C, the collector current reaches 80 A with a power dissipation of 454 W. Typical parameters at TJ=25°C include a VCEsat of 1.7 V, Eoff of 1.1 mJ, and total gate charge of 212 nC.

Feature Summary

• Ultra Field Stop Trench construction for superior performance in demanding switching applications
• Integrated soft and fast co-packaged free-wheeling diode with low forward voltage
• Optimized for high-speed switching with extremely efficient trench technology
• Capable of operating up to a maximum junction temperature of 175°C

Applications

• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding

Procurement Notes

Verify the ordering suffix 'G' indicates a lead-free package configuration as specified in the datasheet. Confirm the package type matches the required thermal and mechanical constraints for your design. Ensure that the component is sourced from authorized distributors to guarantee authenticity and compliance with RoHS standards. Cross-reference the specific document revision number when validating technical specifications against your application requirements.

Selection Notes

Select this IGBT for applications requiring high efficiency and robust switching capabilities at 1200 V. Consider the thermal resistance values and safe operating area curves when designing heat sinks. Evaluate the integrated diode's reverse recovery characteristics for compatibility with your circuit topology. Verify that the gate drive voltage and resistor values align with the specified switching loss conditions for optimal performance.

Part Context

This component belongs to onsemi's Ultra Field Stop IGBT series, designed to replace older technologies in high-power conversion systems. It shares the TO-247 form factor with other devices in the family but offers enhanced trench technology for lower losses. The part is distinct from standard field stop IGBTs due to its optimized switching speed and reduced conduction voltage drop.

Replacement Considerations

Direct replacements within the same series include NGTB25N120FL3WG and NGTB40N120L3WG. Verify pinout compatibility and thermal characteristics before substitution. Ensure that any alternative device meets or exceeds the 1200 V rating and 40 A current capacity required by the original design.

FAQ

What is the typical turn-off switching loss (Eoff) at 25°C?

The typical turn-off switching loss (Eoff) is 1.1 mJ under test conditions of VCC = 600 V, IC = 40 A, and Rg = 10 Ω.

Does the device include an integrated diode?

Yes, the NGTB40N120FL3WG incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage.

What is the maximum collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (V(BR)CES) is rated at 1200 V with the gate-emitter short-circuited.