NGTB40N120FLWG

Overview

The NGTB40N120FLWG is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, housed in a TO-247 package. It utilizes Field Stop Trench technology to achieve low saturation voltage and minimal switching loss. The device features a co-packaged soft and fast free-wheeling diode with low forward voltage. Key electrical ratings include a collector-emitter voltage of 1200 V, a continuous collector current of 40 A at 100°C, and a maximum power dissipation of 260 W at 25°C. It supports a short circuit withstand time of 10 µs and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Low saturation voltage achieved through NPT Trench with Field Stop Technology
• Optimized for high-speed switching with low gate charge and reduced system power dissipation
• Integrated soft and fast free-wheeling diode with low forward voltage characteristics
• Capable of withstanding short circuit conditions for 10 microseconds

Applications

• Solar Inverter systems
• Uninterruptible Power Supply (UPS) Inverters

Procurement Notes

Verify the component authenticity by checking the marking diagram for the '40N120FL' identifier followed by assembly codes. Confirm the presence of the 'G' suffix indicating a lead-free package. Ensure the ordering information matches the specific publication number NGTB40N120FLW/D to guarantee compliance with the documented specifications.

Selection Notes

Select this IGBT for applications requiring robust performance in demanding switching environments. The combination of low on-state voltage and minimal switching loss makes it suitable for efficiency-critical designs. Consider the thermal resistance values when designing heat sinks to maintain the junction temperature within the specified operating range during continuous operation.

Part Context

This component belongs to the onsemi IGBT family featuring Field Stop technology. It is designed as a cost-effective solution for high-voltage switching applications. The device integrates a complementary diode to simplify circuit design in inverter topologies. It represents a specific variant within the broader portfolio of power semiconductor devices offered by the manufacturer.

Replacement Considerations

Direct substitutes must match the 1200V rating, 40A continuous current, and TO-247 package. Verify that alternative components offer comparable switching losses and short circuit capability. Ensure the replacement diode characteristics align with the original soft recovery profile to prevent voltage spikes in the circuit.