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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
- Power - Max：250 W
- Switching Energy：400µJ (off)
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：70ns/140ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：400 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTB40N60IHLWG is a 600 V, 40 A Insulated Gate Bipolar Transistor (IGBT) with an integrated free-wheeling diode in a TO-247 package. It utilizes Field Stop Trench technology to achieve low saturation voltage and minimal switching loss. The device supports continuous collector currents of 80 A at 25°C and 40 A at 100°C. Key electrical parameters include a maximum VCE(sat) of 2.0 V at 40 A, a turn-off switching loss (Eoff) of 0.4 mJ at 25°C, and a total gate charge (Qg) of 130 nC. The junction temperature range spans from -55°C to +150°C.
Feature Summary
- Field Stop Trench construction for optimized on-state voltage and switching performance
- Integrated soft and fast co-packaged free-wheeling diode with low forward voltage
- Low gate charge facilitating efficient driver requirements
Applications
- Inductive heating systems
- Soft switching power converters
- Half bridge resonant applications
Procurement Notes
Verify the component against the official datasheet specifications before integration. Confirm that the TO-247 package dimensions and thermal resistance values align with your system's cooling design. Ensure the operating conditions remain within the absolute maximum ratings defined in the manufacturer documentation to maintain reliability.
Selection Notes
Select this IGBT for applications requiring high efficiency in resonant or soft-switching topologies. The integrated diode simplifies circuit design by eliminating external components. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance values under expected load conditions.
Part Context
This component belongs to ON Semiconductor's IGBT portfolio featuring Field Stop technology. It is designed as a cost-effective solution for demanding switching applications where low conduction and switching losses are critical. The device integrates both N-channel IGBT and diode functions in a single package.
Replacement Considerations
The datasheet lists NGTB40N60IHLW/D as the corresponding ordering number variant. Verify pinout compatibility and thermal characteristics when substituting with other 600 V, 40 A TO-247 IGBTs from different manufacturers.
