NGTB40N65IHRTG

Overview

The NGTB40N65IHRTG is a Field Stop IGBT manufactured by onsemi, housed in a TO-247 package. It features a maximum collector-emitter breakdown voltage of 650V and a continuous collector current rating of 80A. The device supports a pulse collector current of 160A with a maximum power dissipation of 405W. Key electrical parameters include a saturation voltage of 1.7V at 15V gate drive and 40A collector current, a gate charge of 190nC, and an off-state switching energy of 420µJ under test conditions of 400V, 40A, and 10Ω gate resistance. It operates within a junction temperature range of -40°C to 175°C.

Feature Summary

• Field Stop technology for optimized switching performance
• High thermal stability with 175°C junction temperature capability
• Standard input type for straightforward driver integration

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Switched-mode power supplies (SMPS)

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the component matches the required voltage and current ratings for the target circuit design before procurement.

Selection Notes

Select this component for applications requiring robust 650V blocking capability and high current handling up to 80A. Consider the 1.7V saturation voltage for conduction loss calculations and the 420µJ switching energy for thermal management in high-frequency designs.

Part Context

This part belongs to onsemi's IGBT portfolio, specifically utilizing Field Stop technology. It is designed for medium-power switching applications where efficiency and reliability are critical. The TO-247 package provides a balance of current capacity and thermal performance for through-hole mounting.

Replacement Considerations

Check for direct substitutes with identical 650V/80A ratings and TO-247 packaging. Verify that any replacement maintains compatible gate charge and switching energy specifications to ensure circuit stability.