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The NGTB50N65FL2WAG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Field Stop II technology. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 160 A at 25°C. The device operates within a temperature range of -55°C to +175°C and has a maximum power dissipation of 417 W. It is housed in a TO-247-4L flange mount package with four terminals. Key electrical parameters include a gate-emitter threshold voltage maximum of 6.5 V and a maximum gate-emitter voltage of ±20 V.
Verify the specific suffix 'G' against official datasheets to confirm lead-free status and RoHS compliance details. Ensure the TO-247-4L pinout matches the target circuit design, as it differs from standard three-terminal packages. Cross-reference the manufacturer part number with authorized distributors to confirm current availability and authenticity.
Select this component for applications requiring high current handling up to 160 A and robust thermal performance. The integrated anti-parallel diode simplifies circuit topology by eliminating external components. Consider the TO-247-4L package for its reduced switching losses compared to traditional configurations, particularly in high-frequency UPS and solar inversion contexts.
This IGBT belongs to the NGTB50N65FL2 series, which utilizes onsemi's Field Stop II technology. The series is designed for cost-effective yet high-performance switching applications. The TO-247-4L variant specifically addresses efficiency improvements over older TO-247-3L designs by providing a separate emitter drive pin.
NGTB50N65FL2WG is a comparable single-chip IGBT in the same series but uses a TO-247-3L package without an integrated diode.