NGTB50N65FL2WAG

NGTB50N65FL2WAG

$2.17
  • Description:IGBT FS 650V 160A TO-247-4L
  • Series:-

SKU:5fc970b9e063 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT FS 650V 160A TO-247-4L
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Tube
  • IGBT Type:Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):160 A
  • Current - Collector Pulsed (Icm):160 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
  • Power - Max:417 W
  • Switching Energy:420µJ (on), 550µJ (off)
  • Input Type:Standard
  • Gate Charge:215 nC
  • Td (on/off) @ 25°C:23ns/123ns
  • Test Condition:400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr):94 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-4
  • Supplier Device Package:TO-247-4L
  • Grade:-
  • Qualification:-

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NGTB50N65FL2WAG

Overview

The NGTB50N65FL2WAG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Field Stop II technology. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 160 A at 25°C. The device operates within a temperature range of -55°C to +175°C and has a maximum power dissipation of 417 W. It is housed in a TO-247-4L flange mount package with four terminals. Key electrical parameters include a gate-emitter threshold voltage maximum of 6.5 V and a maximum gate-emitter voltage of ±20 V.

Feature Summary

  • Field Stop II Trench construction for superior switching performance
  • TO-247-4L package design to minimize turn-on energy losses
  • Integrated soft and fast co-packaged free-wheeling diode

Applications

  • Uninterruptible Power Supply (UPS) inverters
  • Solar inverter systems

Procurement Notes

Verify the specific suffix 'G' against official datasheets to confirm lead-free status and RoHS compliance details. Ensure the TO-247-4L pinout matches the target circuit design, as it differs from standard three-terminal packages. Cross-reference the manufacturer part number with authorized distributors to confirm current availability and authenticity.

Selection Notes

Select this component for applications requiring high current handling up to 160 A and robust thermal performance. The integrated anti-parallel diode simplifies circuit topology by eliminating external components. Consider the TO-247-4L package for its reduced switching losses compared to traditional configurations, particularly in high-frequency UPS and solar inversion contexts.

Part Context

This IGBT belongs to the NGTB50N65FL2 series, which utilizes onsemi's Field Stop II technology. The series is designed for cost-effective yet high-performance switching applications. The TO-247-4L variant specifically addresses efficiency improvements over older TO-247-3L designs by providing a separate emitter drive pin.

Replacement Considerations

NGTB50N65FL2WG is a comparable single-chip IGBT in the same series but uses a TO-247-3L package without an integrated diode.

NGTB50N65FL2WAGNGTB50N65FL2WAG
$2.17
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