NGTB60N60SWG

Overview

The NGTB60N60SWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Field Stop technology and is housed in a TO-247 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A at 25 °C. Key electrical parameters include a saturation voltage of 1.9 V, a gate-emitter voltage range of ±20 V, and a power dissipation rating of 595 W. The component operates within a temperature range of -55 °C to +175 °C.

Feature Summary

• Field Stop IGBT technology for optimized switching performance
• Soft and fast co-packaged free-wheeling diode
• TO-247 package design for high thermal efficiency

Applications

• Uninterruptible Power Supply (UPS) inverters
• Solar power inverters
• Motor control drives

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm pinout configuration and packaging type. Ensure that any selected variant matches the required thermal and electrical specifications for the target application circuit design.

Selection Notes

Select this component based on the 600 V blocking capability and 100 A current handling requirements. Evaluate the thermal management needs relative to the 595 W power dissipation rating and ensure the drive circuitry accommodates the specified gate-emitter voltage limits.

Part Context

This part belongs to the NGTB series of Field Stop IGBTs from onsemi. These devices are engineered for high-efficiency power conversion applications, combining low conduction losses with controlled switching characteristics suitable for industrial and renewable energy systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing should be performed using official manufacturer substitution guides or equivalent technical parameter matching.