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The onsemi NGTB75N60FL2WG is a Field Stop II trench IGBT housed in a TO-247-3 package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 75 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.8 V at 75 A. Switching characteristics include an energy loss of 2.9 mJ for both turn-on and turn-off operations under hard switching conditions. The component operates within a junction temperature range of -55°C to 175°C and includes a co-packaged anti-parallel diode.
Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure thermal interface materials match the TO-247-3 mounting requirements for optimal heat transfer performance.
Select this component for designs requiring low conduction losses combined with high-speed switching capabilities. Evaluate the 600 V rating against system voltage peaks to ensure adequate safety margins. Consider the 75 A continuous current limit relative to the expected thermal environment and heatsink efficiency.
This part belongs to the NGTB series of Field Stop II IGBTs from onsemi. It represents an evolution in trench technology designed to balance low on-state voltage with minimal switching energy. The series targets applications demanding high efficiency and compact form factors in power conversion systems.
Direct substitutes include the NGTB60N60FL2WG and NGTB75N60FL2WAG. Verify pin compatibility and thermal resistance values before substitution. The WAG variant utilizes a four-lead package which may require layout adjustments compared to the three-lead configuration.