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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 1200V DIE
- Series：-
- Mfr：onsemi
- Package：Tray
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 20A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The NGTD20T120F2SWK is a silicon Insulated Gate Bipolar Transistor (IGBT) die manufactured by onsemi. It features a Trench Field Stop architecture and is rated for a maximum collector-emitter voltage of 1200V with a continuous collector current capacity of 20A. The component utilizes the IGN IGBT wafer fabrication process. It is supplied in bulk packaging as a bare die, intended for integration into custom power modules or discrete assemblies requiring high-voltage switching capabilities.
Feature Summary
- Utilizes Trench Field Stop technology for optimized switching performance
- Designed for high-voltage applications with 1200V blocking capability
- Bare die format allows for flexible integration into custom power modules
Applications
- Industrial motor drives
- Power supply units
- Inverter circuits
Procurement Notes
Verify component authenticity through authorized channels due to obsolete lifecycle status. Confirm technical compatibility with existing module designs before procurement. Check for valid replacement alternatives if current stock is unavailable. Ensure handling procedures meet electrostatic discharge requirements for bare die components.
Selection Notes
Select this component for designs requiring robust 1200V switching with moderate current ratings. Consider thermal management strategies suitable for bare die mounting. Evaluate gate drive requirements against the specific electrical characteristics of the Trench Field Stop structure. Assess mechanical integration constraints within the target power assembly.
Part Context
This part belongs to onsemi's IGBT transistor category, specifically utilizing the IGN process technology. It represents a discrete semiconductor solution designed for integration rather than standalone package use. The product line focuses on providing reliable switching elements for industrial and commercial power electronics applications.
Replacement Considerations
The NGTD20T120F2SWK is listed as obsolete. Verify equivalent parts such as the NGTD30T120F2SWK for potential functional substitution, ensuring current and voltage ratings align with design requirements.
