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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 650V DIE
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 45A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The NGTD21T65F2SWK is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It belongs to the FS2 bare die series and features a Field-Stop architecture. The component is rated for a collector-emitter voltage of 650V and supports a continuous collector current of 21A at 25°C. This device utilizes surface-mount technology in a bare die format, designed for integration into power modules rather than direct PCB mounting.
Feature Summary
- Field-Stop trench gate technology for optimized switching performance
- Bare die configuration suitable for module assembly
- High thermal conductivity substrate design
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix and tape/reel specifications with the manufacturer or authorized distributors before procurement. Confirm that the bare die form factor aligns with the intended module packaging process. Check for recent Product Change Notifications regarding material or manufacturing site changes to ensure supply chain continuity and compliance with project requirements.
Selection Notes
Select this component when a 650V IGBT with approximately 21A current capability is required for high-efficiency power conversion. Ensure the application design accommodates bare die attachment methods such as sintering or soldering. Compare saturation voltage and switching energy losses against alternative FS2 series devices to determine the optimal fit for thermal and electrical constraints.
Part Context
This part is part of onsemi's NGTD series of Field-Stop IGBTs. These devices are engineered for medium-power applications requiring low conduction and switching losses. The FS2 technology represents an evolution in trench gate IGBTs, offering improved ruggedness and thermal performance compared to previous generations.
Replacement Considerations
Direct replacements may include other onsemi FS2 bare die IGBTs with similar voltage and current ratings, such as the NGTD17R120F2SWK or NGTB50N65S1WG, though package and current differences must be evaluated. Cross-brand equivalents require careful verification of pinout compatibility if applicable, though bare dies typically lack standard pinouts.
