NGTD23T120F2SWK

Description：IGBT TRENCH FIELD STOP 1200V DIE
Series：-

SKU:a9cbe75c13ae Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FIELD STOP 1200V DIE
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 25A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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NGTD23T120F2SWK

Overview

The NGTD23T120F2SWK is a Field Stop trench IGBT die manufactured by onsemi. It utilizes a durable and cost-efficient field-stop II trench structure designed for high-performance switching applications. The component offers low saturation voltage and minimal switching losses, making it suitable for demanding power electronics environments.

Feature Summary

Field Stop II trench structure for superior performance
Low conduction voltage characteristics
Minimized switching energy losses

Applications

High-frequency power conversion systems
Industrial motor drives
Inverter circuits requiring low loss

Procurement Notes

Verify the specific datasheet version and electrical parameters directly with onsemi or authorized distributors before integration. Confirm that the bare die format aligns with your assembly capabilities and thermal management requirements. Ensure compliance with RoHS standards and check current lifecycle status as availability may vary.

Selection Notes

Select this component when low on-state voltage and fast switching are critical for efficiency. The trench field-stop technology provides a balance between conduction and switching losses. Evaluate thermal resistance and package compatibility to ensure reliable operation in high-power density designs.

Part Context

This part belongs to onsemi's IGBT transistor family, specifically utilizing trench field-stop technology. It is categorized under discrete semiconductor products and transistors. The device is designed to replace older planar technologies in applications requiring higher efficiency and faster switching speeds.

Replacement Considerations

Check for direct pin-compatible or electrically equivalent alternatives from onsemi's current portfolio. Verify if newer generations of trench field-stop dies offer improved parameters. Consult official substitution guides to ensure functional equivalence in your specific circuit design.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.