NGTD28T65F2WP

Description：IGBT TRENCH FIELD STOP 650V DIE
Series：-

SKU:854933150dc9 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FIELD STOP 650V DIE
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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NGTD28T65F2WP

Overview

The NGTD28T65F2WP is a single IGBT die manufactured by onsemi, utilizing trench field-stop technology with a 650V rating. The component features a die size of 3550 x 3550 μm² and a gate pad dimension of 410 x 670 μm². It is designed for high-performance switching applications requiring low conduction voltage and minimal switching losses.

Feature Summary

Incorporates trench field-stop architecture for enhanced switching performance
Optimized for low on-state voltage and reduced switching energy loss
Engineered for demanding high-frequency power conversion environments

Applications

High-power industrial motor drives
Switched-mode power supplies (SMPS)
Industrial inverter systems

Procurement Notes

Verify the specific datasheet version and die layout documentation before integration, as manufacturing specifications may evolve. Confirm that the intended application supports bare die mounting requirements and thermal management capabilities appropriate for this form factor. Ensure compatibility with existing substrate materials and bonding processes used in your assembly line.

Selection Notes

Select this component when a compact, high-efficiency IGBT solution is required for custom power modules. The trench field-stop design offers superior trade-offs between conduction and switching losses compared to standard planar structures. Evaluate thermal resistance and package constraints to ensure the die fits within the target system's physical and electrical boundaries.

Part Context

This part belongs to onsemi’s discrete IGBT die portfolio, which provides modular building blocks for power electronics. These dies are typically integrated into larger power modules or hybrid packages by system integrators. The trench field-stop technology represents an advanced generation of IGBTs designed to improve efficiency in high-voltage applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-compatibility with other 650V trench field-stop IGBT dies from onsemi or other manufacturers based on pinout, die dimensions, and electrical characteristics.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.