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The NGTG15N120FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Field Stop II Trench technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 25°C. The device operates with a maximum junction temperature of 175°C and supports short-circuit capability for 10 microseconds. Packaged in a TO-247-3 through-hole housing, it integrates a co-packaged free-wheeling diode characterized by soft and fast reverse recovery properties.
This component belongs to the NGTB/NGTG series of Field Stop II IGBTs. It shares the same technological platform as the NGTB40N120FL2WG but offers lower current ratings. The series is designed for cost-effective solutions requiring robust performance in high-frequency power conversion environments.
Verify pinout compatibility with TO-247-3 packages. Ensure replacement devices support 1200V blocking voltage and similar thermal characteristics. Check if integrated diode specifications match circuit requirements for reverse recovery behavior.