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The onsemi NGTG25N120FL2WG is a Field Stop N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 25 A. The device utilizes TO-247 through-hole packaging, supporting a maximum power dissipation of 385 W. It operates within a junction temperature range of -55°C to 175°C and includes an integrated anti-parallel diode with a reverse recovery time of 154 ns.
Verify the specific suffix 'FL2' against official manufacturer documentation to confirm exact electrical characteristics and pinout compatibility. Ensure the procurement channel provides valid traceability for RoHS compliance status. Cross-reference the datasheet revision date to ensure alignment with current design specifications before finalizing orders.
Select this component when a 1200 V rating and 25 A continuous current capacity are required in a standard TO-247 package. Consider the 385 W power dissipation limit and thermal management requirements for the application environment. Verify that the 154 ns diode recovery time meets the system's switching frequency constraints.
This part belongs to the NGT series of Field Stop IGBTs from onsemi. It shares the same core die technology as the NGTB25N120FL2WG but may differ in packaging or specific parameter tolerances defined by the suffix. It serves as a discrete solution for medium-power applications requiring robust voltage handling.
The NGTB25N120FL2WG is a documented alternative from the same manufacturer family. Verify pin compatibility and specific Vce(sat) values before substitution. Other equivalents require careful evaluation of thermal resistance and switching speed parameters.