NGW50T65H3DFPQ

Overview

The NGW50T65H3DFPQ is a third-generation Insulated-Gate Bipolar Transistor (IGBT) from Nexperia, utilizing carrier stored trench-gate and field-stop structures. It operates with a collector-emitter voltage of 650 V and a continuous collector current of 50 A at Tc = 25 °C. The device supports a maximum junction temperature of 175 °C and features a fully rated silicon diode. Key electrical parameters include a typical saturation voltage of 1.72 V at 50 A and 25 °C, and a gate threshold voltage ranging from 4.3 V to 5.7 V. Thermal resistance from junction to case is typically 0.37 K/W for the IGBT.

Feature Summary

• Combines carrier stored trench-gate and field-stop structures for optimized performance.
• Features stable and tight parameter distribution to facilitate easy parallel operation.
• Includes a fully rated fast reverse recovery silicon diode integrated with the IGBT.
• Qualified for HV-H3TRB standards to ensure robustness in demanding environments.

Applications

• Uninterruptible Power Supply (UPS) inverters
• EV charging converters
• Power Factor Correction (PFC) circuits
• Induction heating systems
• Welding equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure that the intended application does not exceed the absolute maximum ratings defined in the limiting values section. Cross-reference the part number with the most recent product data sheet to validate any changes to pinning or thermal characteristics before finalizing procurement orders.

Selection Notes

Select this component for high-voltage, hard-switching industrial power inverter applications requiring efficient switching at high frequencies. The device is suitable for designs needing a maximum junction temperature of 175 °C. Consider the thermal resistance values when designing heatsinking solutions. Verify that the gate drive requirements align with the specified threshold voltage and internal gate resistor values for optimal switching performance.

Part Context

This IGBT belongs to Nexperia's NGW series, which utilizes third-generation technology combining carrier stored trench-gate and field-stop structures. The series is designed for high-voltage, high-frequency industrial power inverter applications. The TO-247-3 package provides a robust mechanical solution for heatsink mounting, supporting high power dissipation requirements in compact designs.

Replacement Considerations

Direct replacements must match the 650 V rating, 50 A current capability, and TO-247-3 package. Verify compatibility of switching losses and thermal resistance. Check if alternative devices offer similar tight parameter distributions for parallel operation. Ensure the replacement includes an integrated fast recovery diode if required by the circuit topology.