NGW60T65M3DFPQ

Overview

The NGW60T65M3DFPQ is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Nexperia. It utilizes silicon technology and features a TO-247-3 surface mount package. Key electrical parameters include a maximum collector-emitter voltage of 650 V, a continuous collector current of 80 A at 25°C, and a peak collector current of 180 A. The device exhibits a collector-emitter saturation voltage of 1.45 V and a maximum gate-emitter voltage of 20 V. Power dissipation is rated at 431 W, with an operating temperature range from -40°C to +175°C.

Feature Summary

• Incorporates carrier storage trench gate field-stop structure combined with third-generation technology for enhanced performance.

Applications

• High-efficiency power conversion systems
• Industrial motor drives
• Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape/reel specifications. Ensure compatibility with existing thermal management designs given the 431 W power dissipation rating. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement plans.

Selection Notes

Select this component when a 650 V IGBT with high current capability in a surface-mount TO-247-3 package is required. Consider the 1.45 V saturation voltage for efficiency calculations in medium-to-high power applications. Verify that the PCB layout supports the SMD mounting style and adequate heat sinking for the specified power dissipation limits.

Part Context

This part belongs to the NGW series of trench field-stop IGBTs from Nexperia. These devices are designed for high-power applications requiring robust switching characteristics. The TO-247-3 package provides a balance between high current handling and surface-mount convenience for industrial and consumer electronics.

Replacement Considerations

Direct substitutes must match the 650 V rating, 80 A continuous current, and TO-247-3 SMD package. Verify pinout compatibility and saturation voltage characteristics to ensure circuit performance remains within design tolerances without modification.