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Product Detailed Parameters
- Description：NGW75T65M3DFP/SOT429-2/TO247-3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 75A
- Power - Max：529 W
- Switching Energy：2.79mJ (on), 1.39mJ (off)
- Input Type：Standard
- Gate Charge：262 nC
- Td (on/off) @ 25°C：44ns/305ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：124 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3L
- Grade：-
- Qualification：-
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Overview
The NGW75T65M3DFPQ is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Nexperia. It utilizes silicon technology and features a TO-247-3 surface-mount package. The device has a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25 °C. The saturation voltage is specified at 1.45 V, with a power dissipation rating of 431 W. It operates within a temperature range of -40 °C to +175 °C.
Feature Summary
- Incorporates carrier storage trench gate field-stop structure for optimized performance.
- Combines trench gate technology with third-generation IGBT architecture.
- Designed for high-efficiency switching applications in power electronics.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Procurement Notes
Verify the specific suffix 'Q' against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with TO-247-3 footprint requirements during PCB design. Cross-reference datasheet revisions to confirm thermal characteristics match system constraints before finalizing procurement orders.
Selection Notes
Select this component when a 650 V rated IGBT with low saturation voltage is required for high-current applications. The TO-247-3 SMT package facilitates automated assembly while maintaining robust thermal performance. Compare the 80 A continuous current rating against peak load demands to ensure adequate safety margins under operating conditions.
Part Context
This part belongs to the NGW series from Nexperia, which integrates trench gate technology with carrier storage layers. The series targets high-efficiency power conversion systems. The TO-247-3 form factor provides a balance between electrical performance and compact surface-mount integration for modern electronic designs.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Generic replacements may differ in saturation voltage or thermal resistance. Verify pinout compatibility and package dimensions before attempting any cross-brand substitution in existing circuits.
