SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NP100T12P2T3 is a 1200 V, 100 A Power Integrated Module featuring an IGBT and anti-parallel free-wheeling diode. It provides ultra-low conduction loss and short circuit ruggedness with a 10 μs capability. The module includes an integrated NTC thermistor for temperature monitoring. Electrical characteristics include a collector-emitter saturation voltage of 1.85 V at 100 A and 150 °C. Thermal resistance from junction to case is 0.26 K/W per IGBT and 0.45 K/W per diode in the inverter configuration. The package is SOT8053-1, measuring 62.5 mm × 122.5 mm × 17 mm.
Verify the specific ordering suffix T3Z against official Nexperia documentation to confirm pinout and packaging details. Ensure the procurement channel sources directly from authorized distributors or Nexperia to guarantee product authenticity and access to current revision data sheets.
Select this module for high-power inverter applications requiring robust short-circuit protection up to 10 μs. Consider the positive temperature coefficient of VCE(sat) for parallel operation stability. Verify thermal management requirements against the specified junction-to-case thermal resistance values for both IGBT and diode sections.
This component belongs to Nexperia's power integrated module series designed for industrial motor control. It combines high-voltage IGBT technology with optimized diode characteristics in a single plastic house package. The design targets efficiency improvements in servo drives and motor inverters through reduced switching energy.
Public confirmed substitute part numbers are not available in the provided datasheet. Consult Nexperia technical support for cross-reference recommendations based on specific electrical and mechanical constraints.