ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
NP109N04PUJ-E2B-AY is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANSISTOR. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NP109N04PUJ-E2B-AY
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：110A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for NP109N04PUJ-E2B-AY
Single FETs, MOSFETs Overview
The NP109N04PUJ-E2B-AY is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a Drain-to-Source Voltage (V_DSS) of 40 V and a continuous Drain Current (I_D) of 110 A at TC = 25°C. The device exhibits a maximum on-state resistance (R_DS(on)) of 2.3 mΩ at V_GS = 10 V and I_D = 55 A, with a typical input capacitance (C_iss) of 6900 pF. Total gate charge (Q_G) is typically 115 nC. The component operates within a channel temperature range up to 175°C and utilizes a TO-263 package.
Single FETs, MOSFETs Feature Summary
- Super low on-state resistance for high current switching applications
- Low input capacitance to support efficient switching performance
- Qualified for automotive application requirements
Single FETs, MOSFETs Applications
- Automotive systems requiring high current switching capabilities
- High current DC-DC converter circuits
- Motor control applications in transportation equipment
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix E2B-AY corresponds to the required tape direction and lead plating configuration before finalizing orders. Confirm that the standard quality grade aligns with the intended application scope, as specific grades require prior written consent from the manufacturer. Ensure compliance with export control regulations if applicable to the destination region.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring a 40 V rating with high continuous current handling up to 110 A. The low R_DS(on) minimizes conduction losses, while the TO-263 package facilitates thermal management via case mounting. Consider the 175°C junction temperature capability for robust operation in demanding environments.
Single FETs, MOSFETs Part Context
This part belongs to the NP109N04PUJ series of N-channel MOS Field Effect Transistors originally developed by NEC Electronics Corporation. Following the April 2010 merger, business operations and product documentation were transferred to Renesas Electronics Corporation. The device remains classified under the standard quality grade for general industrial and automotive use.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes are not explicitly listed in the provided datasheet. Designers should evaluate alternative N-channel MOSFETs with matching 40 V ratings, comparable R_DS(on) values, and identical TO-263 pinouts to ensure mechanical and electrical compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
