FET, MOSFET Arrays NP16N06QLK-E1-AY product image

NP16N06QLK-E1-AY

$1.99
  • Description:MOSFET 2N-CH 60V 16A 8HSON
  • Series:-

SKU:a105062b70bf Category: Brand:

  
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NP16N06QLK-E1-AY is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET 2N-CH 60V 16A 8HSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NP16N06QLK-E1-AY

  • Description:MOSFET 2N-CH 60V 16A 8HSON
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:16A (Tc)
  • Rds On (Max) @ Id, Vgs:39mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:750pF @ 25V
  • Power - Max:1W (Ta), 25W (Tc)
  • Operating Temperature:175°C
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerLDFN
  • Supplier Device Package:8-HSON (5x5.4)
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for NP16N06QLK-E1-AY

NP16N06QLK-E1-AY

FET, MOSFET Arrays Overview

The NP16N06QLK-E1-AY is a dual N-channel power MOSFET designed for automotive applications, manufactured by Renesas Electronics Corporation. It features a HSON-8 surface-mount package and operates with a drain-source voltage of 60 V. The device supports a continuous drain current of 16 A per channel and maintains a maximum on-resistance of 35 mΩ at VGS = 10 V and ID = 8 A. Key electrical parameters include a gate charge of 20 nC, a maximum power dissipation of 44 W, and an operating temperature range up to +175°C. The component is AEC-Q101 qualified and utilizes silicon technology.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration integrated into a single compact HSON-8 package
  • Automotive-grade reliability with AEC-Q101 qualification
  • Low on-state resistance for efficient high-current switching
  • Logic-level drive capability with built-in gate-to-source ESD protection

FET, MOSFET Arrays Applications

  • Automotive power distribution systems
  • High-current DC-DC converter circuits
  • Motor control interfaces in vehicle electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix -E1-AY against official Renesas documentation to confirm pinout compatibility and automotive grade status. Confirm availability through authorized distributors as supply status may vary. Ensure the ordering information matches the exact datasheet revision required for your design implementation.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required in a small form factor. The 60 V rating and 16 A current capacity suit low-voltage automotive loads. Verify thermal management requirements given the 44 W power dissipation rating and ensure the PCB layout supports the HSON-8 package's thermal pad characteristics.

FET, MOSFET Arrays Part Context

This part belongs to Renesas' NP series of automotive power MOSFETs. It shares the same electrical specifications as the NP16N06QLK but includes specific manufacturing or packaging suffixes indicating its automotive qualification and reel configuration. It is distinct from single-channel variants like the NP16N06YLL.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include the NP16N06QLK and NP16N06QLK-E2-AY, which share identical electrical characteristics and pinouts. Verify that any alternative dual N-channel MOSFET meets the 60 V, 16 A, and 35 mΩ RDS(on) requirements while maintaining AEC-Q101 compliance.

NP16N06QLK-E1-AYNP16N06QLK-E1-AY
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