NP29N04QUK-E1-AY

FET, MOSFET Arrays Overview

The NP29N04QUK-E1-AY is an automotive-grade, dual N-channel power MOSFET manufactured by Renesas Electronics. It features a low on-state resistance of 10.1 mΩ at VGS=10V and ID=15A, with a drain-source breakdown voltage of 40V and continuous drain current of 30A. The device operates in the HSON-8 package (5x5.4mm) and supports junction temperatures up to +175°C. Key electrical parameters include a gate charge of 19nC, input capacitance of 1500pF, and threshold voltage of 4V. It meets AEC-Q101 standards for reliability.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact surface-mount package
• Automotive qualification compliant with AEC-Q101 standards
• Enhanced thermal performance supporting high junction temperatures

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• High-current switching applications in vehicle electronics
• Low-voltage DC-DC converter circuits

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Renesas distributors or certified supply chain partners. Confirm that the part number suffix matches the required packaging type and lead plating specifications. Ensure compliance with RoHS directives and check for any recent product change notices affecting manufacturing origin or material composition prior to final procurement authorization.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required in a small footprint. The 40V rating suits low-voltage automotive systems. Evaluate thermal management requirements given the 8-HSON package constraints. Compare gate charge and Rds(on) against single-channel alternatives if space permits, ensuring the 30A current rating aligns with peak load demands without exceeding thermal limits.

FET, MOSFET Arrays Part Context

This part belongs to the NP29 series of dual N-channel MOSFETs from Renesas. It shares the same package and general architecture with variants like NP29N06QUK-E1-AY, which offers a higher 60V breakdown voltage. The series is designed specifically for automotive applications requiring robust performance in compact form factors.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include NP29N06QUK-E1-AY for higher voltage tolerance. Verify pin compatibility and thermal characteristics before substitution. No other direct equivalents are confirmed in public documentation.