NP29N06QDK-E1-AY

FET, MOSFET Arrays Overview

The NP29N06QDK-E1-AY is a dual N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a silicon technology base and is housed in an 8-HSON (5x5.4 mm) surface-mount package. The device supports a drain-source voltage of 60 V and delivers a continuous drain current of 30 A at case temperature. Key electrical parameters include a maximum on-resistance of 20 mΩ at 10 V gate drive, a threshold voltage of 4 V, and a gate charge of 30 nC. It operates with a maximum power dissipation of 44 W at the case and withstands temperatures up to +175°C. The component is qualified under the AEC-Q101 standard for automotive applications.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a compact HSON-8 package for space-constrained designs.
• Automotive-grade reliability certified to AEC-Q101 standards for harsh environment operation.
• High thermal performance capability supporting up to 175°C junction temperature.
• Low on-resistance characteristics optimized for efficient high-current switching.

FET, MOSFET Arrays Applications

• Automotive power distribution units
• Motor control circuits
• DC-DC converter stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix E1-AY against the manufacturer's latest datasheet to confirm pinout compatibility and material composition. Ensure that the ordering information matches the exact package variant required for the PCB footprint. Cross-reference the AEC-Q101 qualification status with project requirements before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a small form factor. The 60V rating and 30A current capacity suit low-voltage automotive systems. Evaluate the 20mΩ on-resistance against thermal management constraints to ensure adequate heat dissipation without external heatsinks in the target application environment.

FET, MOSFET Arrays Part Context

This part belongs to the NP29 series of dual MOSFETs from Renesas. It shares the same package and general architecture as the NP29N06QUK-E1-AY but differs in specific internal configurations or testing criteria indicated by the 'D' suffix. The series targets automotive electronics requiring robust switching performance in compact packages.

FET, MOSFET Arrays Replacement Considerations

The NP29N06QUK-E1-AY is a closely related model within the same series. Verify if the functional differences between the QUK and QDK variants affect the specific circuit design before substitution. No other direct public substitutes are confirmed.