NPT2018

Overview

The NPT2018 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) power amplifier from MACOM Technology Solutions. It operates within a frequency range of DC to 6 GHz and delivers an output power of 12.5 Watts at a drain voltage of 48 Volts. The device provides a gain of 16.5 dB and requires a gate bias of -3V. Packaged in a compact 14-DFN (3x6 mm) format, it utilizes GaN-on-Si technology for high performance.

Feature Summary

• Utilizes GaN-on-Si technology for robust high-power RF performance
• Operates across a wide DC to 6 GHz frequency spectrum
• Delivers 12.5W output power with 16.5dB gain at 48V bias

Applications

• Point-to-point microwave radio systems
• Base station backhaul links
• Electronic warfare applications

Procurement Notes

Verify the specific datasheet version and package marking codes directly with MACOM or authorized distributors. Confirm that the 14-DFN (3x6) footprint matches the target PCB design. Ensure thermal management solutions are adequate for the specified power dissipation levels during operation.

Selection Notes

Select this component when a wideband DC-6 GHz solution is required with moderate high power output. The GaN-on-Si process offers a balance between performance and cost compared to GaN-on-SiC alternatives. Evaluate thermal resistance requirements carefully due to the small surface-mount package size.

Part Context

The NPT2018 belongs to MACOM's Next Generation Power Technology portfolio. It represents the company's focus on advanced semiconductor materials for demanding RF environments. This part supports infrastructure needs where reliability and bandwidth are critical factors.

Replacement Considerations

No public substitute part numbers are documented.