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The NPT2021 is a Gallium Nitride (GaN) wideband transistor manufactured by MACOM Technology Solutions. It is an enhancement-mode High Electron Mobility Transistor (HEMT) designed for high-power RF applications. The device operates from DC to 2.2 GHz and features a voltage rating of 48V with a current rating of 7A. It delivers 50W of output power and provides 15dB gain. The component is housed in a TO-272-2 package, suitable for broadband amplifier designs.
Verify the specific ordering suffix to ensure the correct package variant and tape-and-reel configuration are selected. Confirm RoHS compliance status and export control classification (EAR99) prior to procurement. Ensure that the supplier provides valid datasheets matching the exact part number to avoid discrepancies in electrical specifications or pinout definitions.
Select the NPT2021 when designing circuits requiring high power output within a compact form factor across a wide frequency range. Consider the thermal management requirements associated with the TO-272-2 package. Evaluate the biasing conditions necessary to achieve the specified 50W output power while maintaining stability at frequencies up to 2.2 GHz.
This component belongs to MACOM's portfolio of GaN on Silicon transistors, which are engineered for high-performance analog and RF solutions. These devices support applications in defense, aerospace, and industrial markets where reliability and power density are critical. The NPT2021 represents a standard solution for broadband amplification needs.
No public confirmed substitute part numbers are available in the provided documentation. Consult MACOM technical support for potential alternatives if this specific model is unavailable.
The NPT2021 is rated for operation from DC up to 2.2 GHz.
It utilizes Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology.