NPT2022

Overview

The NPT2022 is a GaN on Si HEMT wideband transistor optimized for DC to 2 GHz operation. It supports CW, pulsed, and linear applications with an output power of 100 W (50 dBm). Key electrical characteristics include 20 dB gain and 60% drain efficiency at 900 MHz under 48 V operation. The device features standard plastic packaging with a bolt-down flange and is RoHS compliant.

Feature Summary

• GaN-on-Silicon HEMT technology for wideband performance
• Suitable for both linear and saturated applications
• Standard plastic package with bolt-down flange design

Applications

• Defense communications
• Land mobile radio
• Avionics
• Wireless infrastructure
• VHF/UHF/L/S-band radar

Procurement Notes

Verify the specific revision status against official MACOM documentation before procurement. Confirm that the ordering suffix matches the required pin configuration and package variant. Ensure compatibility with 48 V supply requirements and thermal management solutions suitable for the plastic package with bolt-down flange. Check for RoHS compliance certification if required by your manufacturing standards.

Selection Notes

Select this component for designs requiring wideband coverage from DC to 2 GHz. It is appropriate for systems needing high output power in a standard plastic package. Consider its suitability for both linear and saturated modes when designing amplifiers for defense or wireless infrastructure. Evaluate thermal dissipation capabilities based on the 100 W output capability and package type.

Part Context

This part belongs to MACOM's NPT series of GaN wideband transistors. These devices utilize SIGANTIC® proprietary GaN-on-Silicon technology. The series is designed for robust performance in demanding RF applications across multiple frequency bands including VHF, UHF, L, and S-bands.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.