NPT25015D

Overview

The NPT25015D is a Gallium Nitride High Electron Mobility Transistor (HEMT) designed for DC to 3 GHz operation. It delivers 23 W of peak envelope power at 3 dB compression and supports linear OFDM applications with 1.5 W output at 2% Error Vector Magnitude. The device operates at a nominal drain-source voltage of 28 V, with an absolute maximum rating of 100 V. It features a thermally enhanced surface-mount plastic package with a junction temperature limit of +200°C and an operating range from -40°C to +85°C.

Feature Summary

• Optimized for continuous wave, pulsed, and linear RF power amplification in the DC to 3 GHz frequency range.
• Utilizes a high-reliability gold metallization process within a thermally enhanced industry-standard surface mount package.
• Capable of supporting single carrier OFDM waveforms with low error vector magnitude performance.
• Subject to 100% RF testing and compliant with lead-free and RoHS standards.

Applications

• Defense Communications
• Land Mobile Radio
• Avionics
• Wireless Infrastructure
• VHF/UHF/L/S-Band Radar

Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to confirm packaging format. The 'D' suffix indicates tube packaging containing 95 pieces, while the 'R' suffix denotes reel packaging. Ensure that procurement channels provide valid traceability and authenticity certificates. Confirm compliance with export control classifications such as EAR99 prior to finalizing acquisition orders.

Selection Notes

Select this component for designs requiring robust GaN HEMT performance up to 3 GHz. Evaluate thermal management requirements carefully, as the device relies on a low-resistance heat path through the exposed paddle. Verify that the application circuit can sustain the specified junction temperature limits to ensure long-term reliability and meet the manufacturer's mean time to failure expectations under nominal operating conditions.

Part Context

This part belongs to the NPT series of Gallium Nitride power transistors manufactured by MACOM Technology Solutions. These devices are built using proprietary silicon-based technology optimized for high-power RF applications. The series provides solutions for broadband communication systems requiring high efficiency and linearity across wide frequency bands.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Cross-reference pin configurations and thermal characteristics when considering alternative components.

FAQ

What is the maximum allowable drain-source voltage?

The absolute maximum drain-source voltage rating is 100 V.

How is the gate terminal configured?

Pins 1 through 4 serve as the Gate terminals.

What is the recommended quiescent current for linear operation?

Typical linear performance data specifies a quiescent drain current of 200 mA.