NPTB00025C

Overview

The NPTB00025C is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) power transistor optimized for DC to 4 GHz operation. It features a 28 V drain-source voltage and delivers 25 W of output power. The device supports continuous wave, pulsed, and linear modes. It utilizes the AC-200B-2 package.

Feature Summary

• High-power GaN HEMT technology
• Broadband DC to 4 GHz frequency range
• Supports CW, pulsed, and linear operation

Applications

• SATCOM Ground Terminals
• RF Power Amplification
• Military and Aerospace Systems

Procurement Notes

Verify the specific package variant and pinout configuration against the official MACOM datasheet before integration. Ensure thermal management solutions align with the 25W output requirements. Confirm that the supply voltage does not exceed the 28V rating. Check for any recent product change notices regarding assembly or material composition updates.

Selection Notes

Select this component when high linearity and broadband performance are required in the sub-6 GHz range. The 28V bias point suits standard RF power supply architectures. Consider the AC-200B-2 package size for board space constraints. Evaluate thermal dissipation capabilities early in the design phase due to the 25W power handling.

Part Context

This device belongs to MACOM's portfolio of GaN on Silicon power transistors. It complements other broadband amplifiers like the MAGX series. The technology leverages GaN HEMT advantages for higher efficiency and power density compared to traditional silicon LDMOS devices in similar frequency bands.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Direct replacement requires matching the 28V/25W/DC-4GHz specifications and AC-200B-2 package footprint.