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The NST847BPDP6T5G is a dual general-purpose bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP transistor within a compact SOT-963 surface-mount package. The device supports a maximum continuous collector current of 100 mA and operates with a collector-emitter voltage rating of 45 V. Key electrical characteristics include a transition frequency of 100 MHz and a power dissipation capacity of 420 mW. The component features high DC current gain, specified at a minimum of 200 for the NPN and 220 for the PNP configuration under standard test conditions.
Verify the specific ordering suffix to ensure the correct tape and reel quantity matches production requirements. Confirm RoHS compliance status through official manufacturer declarations prior to integration. Cross-reference the datasheet revision date to validate parameter consistency against design specifications.
Select this component when space-constrained designs require both NPN and PNP functions. Compare power dissipation limits against thermal management capabilities. Ensure the required current gain meets the specific load driving needs of the target application circuit.
This part belongs to the NST847 series of dual BJT arrays from onsemi. It serves as a compact alternative to discrete transistor pairs, reducing board space and assembly complexity. The SOT-963 package provides a small footprint while maintaining adequate thermal performance for low-power applications.
Verify pinout compatibility before substituting with other dual BJT arrays. Check that replacement parts meet or exceed the 45 V voltage rating and 100 mA current capability.