NSTHS5404T1G

Overview

The NSTHS5404T1G is a single N-channel enhancement mode MOSFET manufactured by onsemi. It features a ChipFET-8 surface-mount package and utilizes silicon technology. The device supports a drain-source voltage of 20 V and delivers a continuous drain current of 7.2 A. Key electrical characteristics include a maximum on-resistance of 25 mΩ, a gate threshold voltage of 600 mV, and a gate charge of 18 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 1.3 W.

Feature Summary

• Single-channel N-channel enhancement mode configuration
• ChipFET-8 surface-mount packaging for compact integration
• Low gate charge and threshold voltage for efficient switching

Applications

• DC-DC converter circuits
• Power management modules
• General-purpose low-voltage switching applications

Procurement Notes

Verify the exact part number against official documentation, as the NSTHS5404T1G designation may differ from standard listings like NTHS5404T1G. Confirm availability status and lifecycle stage directly with the manufacturer or authorized distributors before procurement planning.

Selection Notes

Select this component for designs requiring a 20 V rated N-channel MOSFET in a small footprint. Ensure the application current remains below 7.2 A and verify that the thermal environment supports the specified 1.3 W power dissipation limit without exceeding the junction temperature constraints.

Part Context

This component belongs to the NTHS5404 series of single N-channel MOSFETs. It is designed for low-voltage, high-efficiency switching applications where space constraints necessitate the use of the ChipFET-8 package format.

Replacement Considerations

Cross-reference with the NTHS5404T1G for potential functional equivalence. Verify pinout compatibility and electrical parameters match before substitution.