NSTJD4001NT1G

$0.41

Description：MOSFET P-CH SC88
Series：-

SKU:2bd770b8df38 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

NSTJD4001NT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NSTJD4001NT1G

Description：MOSFET P-CH SC88
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for NSTJD4001NT1G

NSTJD4001NT1G

FET, MOSFET Arrays Overview

The onsemi NTJD4001NT1G is a dual N-channel small signal MOSFET housed in an SC-88 surface-mount package. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 250 mA. The device exhibits a maximum on-resistance (Rds(on)) of 2.5 Ω, with a typical gate charge (Qg) of 0.9 nC at the specified gate-source voltage. Power dissipation is rated at 2.72 W, supporting an operating temperature range from -55°C to +150°C. The component includes integrated ESD protection for the gate terminal.

FET, MOSFET Arrays Feature Summary

Low gate charge design enables fast switching performance
SC-88 package provides a footprint 30% smaller than TSOP-6
Integrated electrostatic discharge (ESD) protection on the gate

FET, MOSFET Arrays Applications

Low side load switching
Li-ion battery supplied devices such as cell phones and PDAs
Buck converters
Level shifting circuits

FET, MOSFET Arrays Procurement Notes

Verify the exact part number against official manufacturer documentation, as the input string NSTJD4001NT1G contains a potential typographical error compared to the standard designation NTJD4001NT1G. Confirm that the ordering suffix matches the required packaging configuration. Ensure compliance with RoHS directives by checking for the appropriate green manufacturing suffix if lead-free composition is mandatory for the specific production run.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require a dual N-channel MOSFET with low gate charge characteristics. The SC-88 package is suitable for high-density PCB layouts where size reduction is critical compared to traditional TSOP-6 packages. Verify that the 30 V voltage rating and 250 mA current capacity align with the specific circuit requirements before finalizing the bill of materials.

FET, MOSFET Arrays Part Context

This component belongs to the onsemi small signal MOSFET family, specifically designed for portable electronic applications. It integrates two independent N-channel enhancement mode transistors within a single compact package. The device is engineered to support battery-powered systems requiring efficient power management and minimal board space utilization.